立方氮化硼薄膜,cubic boron nitride
1)cubic boron nitride立方氮化硼薄膜
1.The materials known as diamond and related thin film materials include diamond films andcubic boron nitride thin films,and the method for preparing them are called the new technique of diamond.金刚石及相关薄膜材料指的是金刚石薄膜和立方氮化硼薄膜,它们的制备技术被称为“新金刚石技术”。
2.Studying the characteristics of the surface of thecubic boron nitride (cBN) thin films is very important to making clear its formation mechanism and application.研究立方氮化硼薄膜表面的性质对于研究立方氮化硼薄膜的成核机理和应用,具有重要的价值。
英文短句/例句
1.The Preparation of Cubic Boron Nitride Thin Films by ECR CVD System and Study of Their Properties;ECR CVD制备立方氮化硼薄膜及性能研究
2.Study on Growth and N-type Doping of Cubic Boron Nitride Thin Films by RF Sputter;立方氮化硼薄膜的射频溅射制备和掺杂研究
3.Researches on Synthesis of High Quality Cubic Boron Nitride Thin Films and Their Optical and Electrical Characteristics;高质量立方氮化硼薄膜的制备和光电特性研究
4.The Relationship between Infrared Absorption and Compressive Stress of the Cubic Boron Nitride Films;立方氮化硼薄膜中压应力与红外吸收的关系
5.Study on Synthesis and Electrical Characteristics of Cubic Boron Nitride Thin Films;立方氮化硼薄膜的制备和电学性质研究
6.Study on Nucleation and Growth of Cubic Boron Nitride Films by Vapor Deposition;立方氮化硼薄膜的汽相成核与生长研究
7.Preparation and Doping of Wide Band Gap Cubic Boron Nitride Films;宽禁带立方氮化硼薄膜的制备与掺杂研究
8.Study of Phase Transformation, Optical and Electrical Properties of c-BN Thin Films立方氮化硼薄膜的相变和光、电性能研究
9.The surface analysis of the c-BN film with electron beam method电子束蒸发制备立方氮化硼薄膜的表面分析
10.Study on the c-BN Films Deposited on Diamond Films at Room Temperature室温下金刚石薄膜上沉积立方氮化硼薄膜的研究
11.Study on Synthesis and Doping of High Quality Cubic Boron Nitride Thin Films by Two-Step Approach;两步法高质量立方氮化硼薄膜的制备和掺杂研究
12.Study on Growth and Semicoducting Properties of Cubic Boron Nitride Films by RF Sputter;立方氮化硼薄膜的射频溅射制备和半导体特性研究
13.Study on Cubic Boron Nitride Films by Pulsed Laser Deposition at Normal Temperature and Nanothermodynamic Analysis of Diamond Nucleation;常温下脉冲激光沉积立方氮化硼薄膜和金刚石的纳米成核热力学研究
14.Study on Synthesis and Doping Properties of c-BN Films;立方相氮化硼薄膜制备及掺杂特性研究
15.Effect of Deposition Parameters on the c BN Content in the BN Films by IBED镀膜参数对离子束增强沉积氮化硼薄膜中立方相含量的影响
posite cubic boron nitride turning tool立方氮化硼复合车刀
17.Influence of boron buffer implantation layer on growth of BN films硼缓冲注入层对氮化硼薄膜生长的影响
18.Parameters Effects on the Phase Structure of Boron Nitride Films;工艺参数对氮化硼薄膜结构相的影响
相关短句/例句
cubic boron nitride thin film立方氮化硼薄膜
1.Controlling the interfacial structure ofcubic boron nitride thin film prepared by plasma-enhanced chemical vapor deposition;立方氮化硼薄膜生长过程中的界面控制
2.Surface growth mechanism ofcubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition;等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理
3)c-BN film立方氮化硼薄膜
4)c-BN films立方氮化硼薄膜
1.The characterization ofc-BN films was car- ried out by XRD,FTIR spectroscopy.同时研究了各个沉积参数(基底直流负偏压、弧光等离子体放电电流、气体流量比)对立方氮化硼薄膜制备的影响。
2.Then the preliminary results for preparingc-BN films in Si wafer are presented, the films prepared by different assisted ion source were analyzed by infrared spectroscopy and X-ray photoelectron spectroscopy.为选出合适的辅助离子源进行沉积制备c-BN薄膜,通过对高能和低能辅助镀膜离子源的重要性能进行比较研究之后,在单晶Si基体进行应用制备立方氮化硼薄膜,用红外光谱(FTIR)及光电子能谱(XPS)分析技术,对不同辅助离子源制备沉积的薄膜,进行比较表征,得出结论:低能辅助镀膜离子源,比高能辅助镀膜离子源更适用于制备立方氮化硼薄膜。
5)cubic boron nitride (c-BN) film立方氮化硼(c-BN)薄膜
6)cubic BN filns growth立方氮化硼薄膜生长
延伸阅读
氮化硼纤维增强体(见氮化硼纤维)氮化硼纤维增强体(见氮化硼纤维)boron nitride fibre reinforcements然1‘珊升莱增强体boronments以氮化硼为主要成分，njtride fibre reinforce-用作陶瓷基、今星其有合材料增强体的一种无机纤维(见氮化硼纤维)。
